Nano/Micro Electronics and VLSI

Nano/Micro Electronics is the term used for electronic components and research on improvements of electronics such as display, size, and power consumption of the device for  practical use. This includes research on memory chips, solar cells and surface physical modifications on electronic devices. It covers quantum mechanical properties of the hybrid material, semiconductor, single dimensional nanotubes, nanowires, and so forth. Nano/Micro electronics aims at improving the capabilities of electronic devices and displays while shrinking them and reducing their weight and power consumption. It addresses how advanced material, such as Si and Ge are used to build faster transistors and diodes. This effort has been aggressive to the degree that the industry is rapidly approaching inherent physical limits of miniaturisation. According to the European Nanoelectronics Initiative Advisory Council (ENIAC), the research domain of silicon-based nano/micro electronics industry could be commonly classified into three categories: 1) More Moore (Advanced CMOS), 2) More than Moore 3) Beyond CMOS. 

VLSI technology has taken a fundamental role in developing most of the high-tech electronic circuits. Following Moore’s law, technology has scaled down very rapidly in the past few decades to account for higher packaging density ICs. In VLSI circuits, power dissipation is a critical design parameter as it plays a vital role in the performance estimation of the battery operated devices. The decrease in chip size and increase in chip density and complexity escalate the difficulty in designing higher performance low power consuming system on a chip. Besides, leakage current also plays a vital role in Power management of low power VLSI devices. To develop low power portable devices, leakage and dynamic power reduction is emerging as a primary goal of the VLSI circuit design.

Sub-Topics

  • Emerging Memory Technologies: Material, Fabrication and Characterization

In recent years, emerging memory technologies such as PCM & RRAM have substantiated their ability for the next generation high-speed, non-volatile memory and also towards ‘universal memory’ for future computing systems. This is primarily owing to its all-round characteristics such as high read/write speeds, low power consumption, longer endurance, high scalability and non-volatile nature. More recently, artificial intelligence, IOT based devices, deep learning and machine learning systems and other new applications offer a strong opportunity for the research and development in the field of emerging memories. This research mainly includes study on physical properties of materials with microscopic analysis, device fabrication and their electrical characterization.

Associated Faculty Members

Significant Publications

  1. Anushmita Pathak, Manushree Tanwar, Rajesh Kumar and Shivendra Kumar Pandey, “Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials”, Semicond. Sci. Technol., vol. 37(10), pp. 105012, 2022.
  2. Anushmita Pathak and Shivendra Kumar Pandey, “Unraveling the optical bandgap and local structural change during phase transition in In3SbTe2 material through UV–Vis–NIR and XPS studies”, J. Appl. Phys., vol. 131(20), pp. 205305, 2022.
  3. Om Prakash Das and Shivendra Kumar Pandey, “Systematic evolution of optical band gap and local chemical state in transparent MgO and HfO2 resistive switching materials”, Phys. Status Solidi B, vol. 2200103, 2022.
  4. Om Prakash Das and Shivendra Kumar Pandey, “Effect of conducting filament radius on local temperature and activation power of ON-state ReRAM device”, Semicond. Sci. Technol.,vol. 36, pp. 095039, 2021.
  5. Himangshu Deka, Arun Kumar Sunaniya, and Pratima Agarwal, “Design and Simulation of Highly Efficient One-Sided Short PIN Diode Silicon Heterojunction Solar Cell”, IEEE Journal of Photovoltaics, 2021.
  6. Arun Kumar Sunaniya, Kavita Khare, “Design of Resistor less 45nm Switched Inverter Scheme (SIS)ADC & Clocked SIS ADC for Low Noise and Improved Power Delay Product”, European Journal of Scientific Research, vol. 111(4), pp. 510-523, 2013.
  7. Atul Kumar Sharma, Anup Kumar Sharma, and Ritu Sharma, “Model study of complex conductivity and permittivity of CNT/PANI composite (CPC) material for application of THz antenna”, Materials Today: Proceedings, vol. 46, pp. 5833-5837, 2021.
  8. Anup Kumar Sharma, “Analysis of growth temperature variation and different catalysts on the morphology of synthesized carbon nanotubes”, Fullerenes, Nanotubes and Carbon Nanostructures, pp. 1-7, 2021.
  9. Atul Kumar Sharma, Anup Kumar Sharma, Ritu sharma, “Synthesis and study of Polyaniline/MWCNT Composite for optoelectronic Application”, Bulletin of Materials science, 2020.
  10. Anup Kumar Sharma, Shriniwas Yadav, Swati Sharma, Ritu Sharma, “Scalable Synthesis of Highly Conductive Graphene-Based Thin Film for Supercapacitor Application”, IEEE Transactions on Nanotechnology, vol. 18, pp. 494-501, 2019.
  11. A.K. Sharma & R. Sharma, “Fabrication and Characterization of Zinc Oxide/Multi-walled Carbon Nanotube Schottky Barrier Diodes”, Journal of Electronic Materials, vol. 47, pp. 3037, 2018.
  12. Anup Kumar Sharma, Ritu Sharma & Upendra Chaudhary, “Hydrogen-acetylene gas ratio and catalyst thickness effect on the growth of uniform layer of carbon nanotubes”, Fullerenes, Nanotubes and Carbon Nanostructures, vol. 25(7), pp. 397-403, 2017.
  13. Anup Kumar Sharma, Ritu Sharma, Ramesh Prajapati & Santosh Chaudhary, “Effect of different acid oxidation on morphology, dispersion and optical band-gap of multi-walled carbon nanotubes”, Fullerenes, Nanotubes and Carbon Nanostructures, vol. 24(5), pp. 332-338, 2016.
  14. R. Sharma, A.K. Sharma, G. Sharma, and V. Sharma, “Effect of different metal catalysts on the growth of carbon nanotubes by chemical vapor deposition using five step process”, Opto. Adv. Mat, vol. 17, pp. 1728-1733, 2015.
  15. Ritu Sharma, Anup Kumar Sharma & Varshali Sharma, “Synthesis of carbon nanotubes by arc-discharge and chemical vapor deposition method with analysis of its morphology, dispersion and functionalization characteristics”, Cogent Engineering, vol. 2(1), 2015.