Dr. Shivendra Kumar Pandey

July 12, 2022 by Shivendra Kumar Pandey
No comments
Assistant Professor
Email: skpandey[at]ei.nits.ac.in
Date of Joining: 18/06/2018
Academic/Industrial Experience: 4+ years
Google Scholar IconGoogle Scholar: Click Here
ResearchGate: Click Here
ORCID: Click Here

 

 

 

 

 

 

 

 

 

 

ACADEMIC QUALIFICATIONS 

  • Ph.D. in Electrical Engineering from Indian Institute of Technology (IIT) Indore, India
  • B.E. in Electronics & Communication Engineering from Rajiv Gandhi Proudyogiki Vishwavidyalaya (RGPV) Bhopal, India

EXPERIENCE  

  • Assistant Professor, Grade-I (Level 12) in Dept. of EIE, NIT Silchar from Jul 2022 to till date.
  • Assistant Professor, Grade-II (Level 11) in Dept. of EIE, NIT Silchar from Nov 2019 to Jul 2022.
  • Assistant Professor, Grade-II (Level 10) in Dept. of EIE, NIT Silchar from Jun 2018 to Nov 2019.

RESEARCH INTERESTS

  • Novel Electronic Devices (Material property, Characterization, Simulation & Modeling)
  • Emerging Memory (PCM, RRAM) Devices – Materials, Fabrication, Characterization and Device performance
  • Non-volatile memory technologies for Internet of things (IOT) devices, Automotive Systems, Neuromorphic Computing and ML and DL Systems
  • Advanced application of resistive switching devices including Multi-bit Data Storage, Threshold Switches and Logic Devices

SHORT BIOGRAPHICAL SKETCH 

Dr. Shivendra Kumar Pandey graduated in Electronics and Communication Engineering from RGPV Bhopal, India. In Jan 2018, he received Ph.D. in Electrical Engineering from IIT Indore, India. He received International Travel Grant from SERB-DST, Govt. of India. Since Jun 2018, he has been working as Assistant Professor of Electronics & Instrumentation Engineering at National Institute of Technology Silchar, Assam, India. He has published research articles in Applied Physics Letters, Journal of Applied Physics, Review of Scientific Instruments, Physica Status Solidi-Rapid Research Letters etc. His current research interests include Emerging memory technologies (PCM, RRAM), Nanoelectronics, VLSI Devices, Sensors. He obtained Early Career Research Award from Science and Education Research Board (SERB), Department of Science and Technology (DST), Govt. of India. He is Principal Investigator of Nano-electronics & Emerging Memory (NEEM) Research Laboratory at NIT Silchar, Assam, India.

EXTERNAL FUNDING

Sponsored Research Projects: 

  • Title: Structural characterization and device performance of superlattice structure-based phase change memory for low power consumption and high-speed non-volatile data storage applications; Funding Agency: SERB under Core Research Grant (CRG); Duration: 2024-2027; Cost: Rs. 39.41 Lakh, Role: Principle Investigator; Status: Ongoing
  • Title: Design and development of multi-bit phase change memory devices for next-generation high density non-volatile memory applications; Funding Agency: SERB under Early Career Research (ECR) Award; Duration: 2019-2022; Cost: Rs. 44.77 Lakh, Role: Principle Investigator; Status: Completed

Workshop/Conference

  • Title: Emerging Electronics for Logic and Memory Devices: Towards Next-generation Computing System; Funding Agency: SERB under Karyashala Accelerate Vigyan (AV) Scheme; Duration: 15th-21st September 2022; Cost: Rs. 05 Lakh, Role: Coordinator; Status: Completed
  • Title: 2nd International Conference on Emerging Electronics and Automation (E2A 2022); Funding Agency: SERB under Seminar/Symposia; Duration: 16th-18st December 2022; Cost: Rs. 02 Lakh, Role: Organizing Chair; Status: Completed

SUBJECTS TAUGHT (INCLUDING SUBJECTS CURRENTLY TEACHING)

  • Microprocessors & Microcontrollers
  • Semiconductor Device Physics
  • Digital Electronics
  • Analog Electronics
  • Nano/Microelectronics

PROFESSIONAL MEMBERSHIPS

  • Member, IEEE
  • Member, IEEE EDS
  • Member, MRS
  • Life Member, MRSI

ADMINISTRATIVE RESPONSIBILITY

  • GeM Nodal Officer (EIE Department) from 16 February 2024 to till date
  • Member, Departmental Ph.D. Monitoring Committee (DPMC), Department of EIE from August 2023 to till date
  • Secretary, Departmental Purchase Committee (DPC), Department of EIE from January 2021 to till date
  • Member, Departmental Undergraduate Programme Committee (DUPC), Department of EIE from January 2021 to July 2023

PUBLICATIONS

JOURNALS

  1. Anushmita Pathak and Shivendra Kumar Pandey; Low power crystallization process in In3SbTe2 phase-change memory devices with thin oxide layer; Phys. Status Solidi B 2400081 (2024) [Click Here]
  2. Om Prakash Das and Shivendra Kumar Pandey; Exploring the Physical Properties Related to Resistive Switching Events in HfO2 Based RRAM Devices with an Analytical Framework; ACS Applied Electronic Materials 5, 327  (2023) [Click Here]
  3. Anushmita Pathak, Manushree Tanwar, Rajesh Kumar and Shivendra Kumar Pandey; Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials; Semicond. Sci. Technol. 37 (10), 105012 (2022) [Click Here]
  4. Anushmita Pathak and Shivendra Kumar Pandey; Unraveling the optical bandgap and local structural change during phase transition in In3SbTe2 material through UV–Vis–NIR and XPS studies; J. Appl. Phys. 131(20), 205305 (2022) [Click Here]
  5. Om Prakash Das and Shivendra Kumar Pandey; Systematic evolution of optical band gap and local chemical state in transparent MgO and HfO2 resistive switching materials; Phys. Status Solidi B 259 (10), 2200103 (2022) [Click Here]
  6. Om Prakash Das and Shivendra Kumar Pandey; Effect of conducting filament radius on local temperature and activation power of ON-state ReRAM device, Semicond. Sci. Technol. 36, 095039 (2021) [Click Here]
  7. Shivendra Kumar Pandey and Anbarasu Manivannan; Direct evidence of structural transformation and thermal stability of amorphous InSbTe phase change material, Scripta Materialia 192, 73 (2021) [Click Here]
  8. Shivendra Kumar Pandey and Anbarasu Manivannan; A fully automated temperature-dependent resistance measurement setup using van der Pauw method; Rev. Sci. Instrum. 89, 033906 (2018) [Click Here]
  9. Shivendra Kumar Pandey and Anbarasu Manivannan; Extremely high contrast multilevel resistance states of In3SbTe2 device for high density non-volatile memory applications; Phys. Status Solidi (RRL) 11, 1700227 (2017) [Click Here]
  10. Shivendra Kumar Pandey and Anbarasu Manivannan; A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices; AIP Advances 7, 075206 (2017) [Click Here]
  11. Shivendra Kumar Pandey and Anbarasu Manivannan; Sub-nanosecond threshold-switching dynamics and set process of In3SbTe2 phase-change memory devices; Appl. Phys. Lett. 108, 233501 (2016) [Click Here]
  12. Smriti Sahu, Shivendra Kumar Pandey, Anbarasu Manivannan, Uday Prabhakarrao Deshpande, Vasant G. Sathe, Varimalla Raghavendra Reddy, and Murugavel Sevi; Direct evidence for phase transition in thin Ge1Sb4Te7 films using in situ UV–Vis–NIR spectroscopy and Raman scattering studies; Phys. Status Solidi B 253, 1069 (2016) [Click Here]

CONFERENCES

  1. Amiya Kumar Mishra, Anushmita Pathak and Shivendra Kumar Pandey; Electro-thermal analysis of Phase Change Memory Devices for Synaptic Applications; 2023 IEEE 20th India Council International Conference (INDICON), 621-625 (2023)
  2. Anushmita Pathak, Shivendra Kumar Pandey; Electrothermal modeling of Phase change memory with interfacial oxide layer during RESET operation; 2023 IEEE Silchar Subsection Conference (SILCON), 1-4 (2023)
  3. Abhinav Kumar Gupta, Anushmita Pathak, Shivendra Kumar Pandey; Impact of oxygen flow rate and annealing on the structural and optical properties of HfO2 thin films; 2023 IEEE Silchar Subsection Conference (SILCON), 1-4 (2023)
  4. Anushmita Pathak, Shivendra Kumar Pandey; Exploring In3SbTe2 Chalcogenide Material for Multi-Bit Phase Change Memory Applications; MRS Spring Meeting & Exhibit 2023, San Francisco, USA
  5. R Attar, R Sawant, S K Pandey, P V Joglekar, S Mondal, S Kulkarni and J K Behera; Design of Tunable Far-Infrared Plasmonic Absorber Based on Chalcogenide Phase Change Materials; IOP Journal of Physics: Conference Series 2426, 012068 (2023).
  6. Om Prakash Das and Shivendra Kumar Pandey; Optical, Compositional and Electrical Properties of Transparent MgO Thin Film for ReRAM Devices; IOP Journal of Physics: Conference Series 2426, 012031 (2023)
  7. Anushmita Pathak, Shivendra Kumar Pandey, Jitendra Kumar Behera; Optical band-gap evolution and local structural change in Ge2Sb2Te5 phase change material; IOP Journal of Physics: Conference Series 2426, 012045 (2023)
  8. Samdar Singh, Om Prakash Das, Arun Kumar Sunaniya and Shivendra Kumar Pandey; Simulation of Optimum Stored Charge in SONOS FLASH Memory using Silvaco TCAD; 6th International Conference on Devices, Circuits and Systems (ICDCS), 174-177 (2022)
  9. Prachi Tripathi, Shivendra Kumar Pandey and Anup Kumar Sharma; Design and Simulation based Analysis of Flexible Capacitive Pressure Sensor and Improvement in Sensing Characteristics; 2nd International Conference for Emerging Technology (INCET), 1-5 (2021)
  10. Om Prakash Das and Shivendra Kumar Pandey; Influence of conducting filament dimension on the performance of ReRAM device in the SET state; IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) 13 -16 (2020)
  11. Shivendra Kumar Pandey and Anbarasu Manivannan; Investigation on In3SbTe2 phase change material for multi-bit data storage applications; Proceedings of European Phase Change and Ovonic Symposium (E\PCOS); Cambridge University, UK, 132 (2016).
  12. Shivendra Kumar Pandey and Anbarasu Manivannan; A Systematic Study on Electrical Switching Characteristics of InSbTe Phase Change Material for Multi-bit Data Storage; Materials Research Society (MRS) Spring Meeting; Phoenix, USA (2016).
  13. Shivendra Kumar Pandey and Anbarasu Manivannan; A weak electric field assisted ultrafast switching characteristics of InSbTe phase change memory devices; International Conference on Nanoscience and Technology (ICONSAT); IISER Pune, India (2016).
  14. Shivendra Kumar Pandey and Anbarasu Manivannan; Electrical and structural properties of thin InSbTe films for multi-bit phase change random access memory applications; International Workshop on Physics of Semiconductor Devices (IWPSD); IISc Banglore, India (2015).

 

  CONFERENCE/WORKSHOP/SHORT-TERM COURSES ORGANIZED

  • General Chair: 3rd International Conference on Emerging Electronics and Automation (E2A 2023), 15th-17th December 2023, NIT Silchar. ( http://e2a2023.nits.ac.in)
  • Organizing Chair: 2nd International Conference on Emerging Electronics and Automation (E2A 2022), 16th-18th December 2022, NIT Silchar. ( http://e2a2022.nits.ac.in)
  • Coordinator: SERB Sponsored under Karyashala Accelerate Vigyan (AV) Scheme One Week High-End Workshop on Emerging Electronics for Logic and Memory devices: Towards Next-generation Computing System, 15th-21st September 2022
  • Coordinator: TEQIP-III Sponsored Five Days Workshop on NEMS Technologies: Modern Interdisciplinary approach in Engineering 2020, 17th-21st August 2020
  • Coordinator: TEQIP-III Sponsored Five Days Workshop on Electronic Systems for Mechanical Automation & Robotic Technology (eSMART – 2019), 20th-24th May 2019

 Ph.D SUPERVISION

Sl. No. Name of the Scholar Thesis Title Supervision Status
3 Amiya Kumar Mishra PCM-based neuromorphic computing Sole Supervisor Ongoing
2 Anushmita Pathak Phase change materials for non-volatile data storage Sole Supervisor Ongoing
1 Om Prakash Das Fabrication and modeling of Oxide-based RRAM Devices for non-volatile memory applications Sole Supervisor Completed (2018-2023)

M.TECH SUPERVISION

S.No Student Status Year
4 Nirmal Dev S S Completed 2022-23
3 Samdar Singh Completed 2021-22
2 Prachi Tripathi Completed 2020-21
1 Saras Mani Mishra Completed 2018-19

AWARDS AND RECOGNITIONS

  • Obtained Early Career Research Award from SERB-DST, Govt. of India
  • Received International Travel Support (ITS) from SERB-DST, Govt. of India
  • Ph.D. Research Fellowship from Ministry of Human Resource and Development, India, Govt. of India